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TIP3055 Arkusz danych(PDF) 4 Page - ON Semiconductor |
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TIP3055 Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 6 page TIP3055 (NPN), TIP2955 (PNP) http://onsemi.com 4 TIP3055 TIP2955 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMP) 0.1 100 1000 10 1.0 2.0 0.3 7.0 10 VCE = 4.0 V TJ = 25°C 0.2 0.5 0.7 3.0 5.0 10 5.0 0.1 0.3 2.0 3.0 Figure 2. Maximum Rated Forward Bias Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 2.0 4.0 6.0 10 20 0.2 0.5 1.0 20 30 50 100 40 60 SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C TJ = 150°C 300 ms 1.0ms 10ms dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. |
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