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LM3445M Arkusz danych(PDF) 4 Page - Texas Instruments

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LM3445
SNVS570L – JANUARY 2009 – REVISED MAY 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Limits in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating Temperature
Range ( TJ = −40°C to +125°C). Minimum and Maximum limits are specified through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at TJ = +25ºC, and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
INTERNAL PWM RAMP
fRAMP
Frequency
5.85
kHz
VRAMP
Valley voltage
0.96
1.00
1.04
V
Peak voltage
2.85
3.00
3.08
DRAMP
Maximum duty cycle
96.5
98.0
%
DIM DECODER
tANG_DET
Angle detect rising threshold
Observed on BLDR pin
6.79
7.21
7.81
V
VASNS
ASNS filter delay
4
µs
ASNS VMAX
3.85
4.00
4.15
V
IASNS
ASNS drive capability sink
VASNS = 2V
7.6
mA
ASNS drive capability source
VASNS = 2V
-4.3
DIM low sink current
VDIM = 1V
1.65
2.80
DIM High source current
VDIM = 4V
-4.00
-3.00
VDIM
DIM low voltage
PWM input voltage
0.9
1.33
V
threshold
DIM high voltage
2.33
3.15
VTSTH
Tri-state threshold voltage
Apply to FLTR1 pin
4.87
5.25
V
RDIM
DIM comparator tri-state impedance
10
M
CURRENT SENSE COMPARATOR
VFLTR2
FLTR2 open circuit voltage
720
750
780
mV
RFLTR2
FLTR2 impedance
420
k
VOS
Current sense comparator offset voltage
-4.0
0.1
4.0
mV
GATE DRIVE OUTPUT
VDRVH
GATE high saturation
IGATE = 50 mA
0.24
0.50
V
VDRVL
GATE low saturation
IGATE = 100 mA
0.22
0.50
IDRV
Peak souce current
GATE = VCC/2
-0.77
A
Peak sink current
GATE = VCC/2
0.88
tDV
Rise time
Cload = 1 nF
15
ns
Fall time
Cload = 1 nF
15
THERMAL SHUTDOWN
TSD
Thermal shutdown temperature
See (1)
165
°C
Thermal shutdown hysteresis
20
THERMAL SHUTDOWN
RθJA
VSSOP-10 junction to ambient
121
°C/W
(1)
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. In applications where high power dissipation
and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient
temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation
of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as
given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
4
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