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STP10N60M2 Arkusz danych(PDF) 9 Page - STMicroelectronics |
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STP10N60M2 Arkusz danych(HTML) 9 Page - STMicroelectronics |
9 / 24 page DocID024710 Rev 2 9/24 STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Test circuits 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100 Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01473v1 VDS ton tdon tdoff toff tf tr 90% 10% 10% 0 0 90% 90% 10% VGS |
Podobny numer części - STP10N60M2 |
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Podobny opis - STP10N60M2 |
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