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TIP35 Arkusz danych(PDF) 1 Page - Bourns Electronic Solutions |
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TIP35 Arkusz danych(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS P RO D UCT INFORMA TION 1 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 1 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) TIP35 TIP35A TIP35B TIP35C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP35 TIP35A TIP35B TIP35C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5V Continuous collector current IC 25 A Peak collector current (see Note 1) ICM 40 A Continuous base current IB 5A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ½LIC 2 90 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 250 °C SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAAA B C E 1 2 3 OBSOLET E |
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