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TIP35A Arkusz danych(PDF) 1 Page - Bourns Electronic Solutions

Numer części TIP35A
Szczegółowy opis  Designed for Complementary Use with the TIP36 Series
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TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
P RO D UCT
INFORMA TION
1
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
TIP36 Series
125 W at 25°C Case Temperature
25 A Continuous Collector Current
40 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
TIP35
TIP35A
TIP35B
TIP35C
VCBO
80
100
120
140
V
Collector-emitter voltage (IB = 0)
TIP35
TIP35A
TIP35B
TIP35C
VCEO
40
60
80
100
V
Emitter-base voltage
VEBO
5V
Continuous collector current
IC
25
A
Peak collector current (see Note 1)
ICM
40
A
Continuous base current
IB
5A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Unclamped inductive load energy (see Note 4)
½LIC
2
90
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLET
E


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