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TIP35C Arkusz danych(PDF) 2 Page - Bourns Electronic Solutions

Numer części TIP35C
Szczegółowy opis  Designed for Complementary Use with the TIP36 Series
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TIP35C Arkusz danych(HTML) 2 Page - Bourns Electronic Solutions

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TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
TIP35
TIP35A
TIP35B
TIP35C
40
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 80 V
VCE =100 V
VCE =120 V
VCE =140 V
VBE =0
VBE =0
VBE =0
VBE =0
TIP35
TIP35A
TIP35B
TIP35C
0.7
0.7
0.7
0.7
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB =0
IB =0
TIP35/35A
TIP35B/35C
1
1
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
IC =1.5 A
IC = 15 A
(see Notes 5 and 6)
25
10
50
VCE(sat)
Collector-emitter
saturation voltage
IB =
1.5 A
IB =
5 A
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
1.8
4
V
VBE
Base-emitter
voltage
VCE =
4 V
VCE =
4 V
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
2
4
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC =
1 A
f = 1 kHz
25
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 1 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 15 A
VBE(off) = -4.15 V
IB(on) = 1.5 A
RL = 2 Ω
IB(off) = -1.5 A
tp = 20 µs, dc ≤ 2%
1.2
µs
toff
Turn-off time
0.9
µs
OBSOLET
E


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