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BC847AMB Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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3 / 14 page BC847XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 5 March 2012 3 of 14 NXP Semiconductors BC847xMB series 45 V, 100 mA NPN general-purpose transistors 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp 1ms -200 mA IBM peak base current single pulse; tp 1ms -100 mA Ptot total power dissipation Tamb 25 C [1][2] -250 mW Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C |
Podobny numer części - BC847AMB |
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Podobny opis - BC847AMB |
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