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AM28F256A-70EEB Arkusz danych(PDF) 7 Page - Advanced Micro Devices

Numer części AM28F256A-70EEB
Szczegółowy opis  256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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Producent  AMD [Advanced Micro Devices]
Strona internetowa  http://www.amd.com
Logo AMD - Advanced Micro Devices

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Am28F256A
7
PIN DESCRIPTION
A0–A14
Address Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE# (E#)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0-DQ7
Data Inputs during memory write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE# (G#)
Output Enable active low input gates the outputs of the
device through the data buffers during memory read
cycles. Output Enable is high during command
sequencing and program/erase operations.
VCC
Power supply for device operation. (5.0 V
± 5% or 10%)
VPP
Program voltage input. VPP must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the mem-
ory array contents. Memory contents cannot be altered
when VPP ≤ VCC +2 V.
VSS
Ground.
WE# (W)
Write Enable active low input controls the write function
of the command register to the memory array. The target
address is latched on the falling edge of the Write En-
able pulse and the appropriate data is latched on the ris-
ing edge of the pulse. Write Enable high inhibits writing
to the device.


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