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STP42N65M5 Arkusz danych(PDF) 8 Page - STMicroelectronics |
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STP42N65M5 Arkusz danych(HTML) 8 Page - STMicroelectronics |
8 / 18 page Electrical characteristics STx42N65M5 8/18 Doc ID 15317 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode VGS(th) 0.9 0.8 0.7 0.6 -50 0 TJ(°C) (norm) 1.0 50 100 1.1 ID = 250 µA AM01571v1 RDS(on) -50 0 TJ(°C) (norm) 100 0.5 1.0 1.5 2.0 50 ID = 16.5 A VGS= 10 V 0 AM01573v1 VSD 0 10 ISD(A) (V) 5 25 15 20 0.2 0.3 0.4 0.5 0.6 0.7 0.8 30 0.9 1.0 TJ=150°C TJ=25°C TJ=-25°C AM01574v1 BVDSS -50 0 TJ(°C) (norm) 50 100 0.95 1.00 1.05 0.90 AM01572v1 ID = 1 mA E 300 200 100 0 0 20 RG( Ω) ( µJ) 10 30 400 500 600 5 15 25 35 40 45 ID=20A VDD=400V L=50µH Eon Eoff AM01575v1 |
Podobny numer części - STP42N65M5 |
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Podobny opis - STP42N65M5 |
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