74LVC8T245PW datasheet(10/28 Pages) NXP

Numer części	74LVC8T245PW

Szczegółowy opis	8-bit dual supply translating transceiver; 3-state

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74LVC_LVCH8T245

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Product data sheet

Rev. 3 — 12 December 2011

10 of 28

NXP Semiconductors

74LVC8T245; 74LVCH8T245

8-bit dual supply translating transceiver; 3-state

10. Dynamic characteristics

[1]

tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.

[1]

tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.

[1]

CPD is used to determine the dynamic power dissipation (PD in W).

PD =CPD  VCC2  fi  N+ (CL  VCC2  fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

(C

L  VCC

2

 f

o) = sum of the outputs.

[2]

fi = 10 MHz; VI =GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .

Table 8.

Typical dynamic characteristics at VCC(A) = 1.2 V and Tamb = 25 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6.

Symbol Parameter

Conditions

VCC(B)

Unit

1.2 V

1.5 V

1.8 V

2.5 V

3.3 V

5.0 V

tpd

propagation delay

An to Bn

11.0

8.5

7.4

6.2

5.7

5.4

ns

Bn to An

11.0

10.0

9.5

9.1

8.9

ns

tdis

disable time

OE to An

9.5

ns

OE to Bn

10.2

8.2

7.8

6.7

7.3

6.4

ns

ten

enable time

OE to An

13.5

ns

OE to Bn

13.6

10.3

8.9

7.5

7.1

7.0

ns

Table 9.

Typical dynamic characteristics at VCC(B) = 1.2 V and Tamb = 25 C[1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6.

Symbol Parameter

Conditions

VCC(A)

Unit

1.2 V

1.5 V

1.8 V

2.5 V

3.3 V

5.0 V

tpd

propagation delay

An to Bn

11.0

10.0

9.5

9.1

8.9

8.8

ns

Bn to An

11.0

8.5

7.3

6.2

5.7

5.4

ns

tdis

disable time

OE to An

9.5

6.8

5.4

3.8

4.1

3.1

ns

OE to Bn

10.2

9.1

8.6

8.1

7.8

ns

ten

enable time

OE to An

13.5

9.0

6.9

4.8

3.8

3.2

ns

OE to Bn

13.6

12.5

12.0

11.5

11.4

ns

Table 10.

Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C[1][2]

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

VCC(A) and VCC(B)

Unit

1.8 V

2.5 V

3.3 V

5.0 V

CPD

power dissipation

capacitance

A port: (direction A to B);

B port: (direction B to A)

11

12

pF

A port: (direction B to A);

B port: (direction A to B)

13

pF

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