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STD6NK50ZT4 Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STD6NK50ZT4
Szczegółowy opis  N-CHANNEL 500V - 0.93ohm - 5.6A TO-220/TO-220FP/DPAK
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD6NK50ZT4 Arkusz danych(HTML) 2 Page - STMicroelectronics

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STP6NK50Z - STF6NK50Z - STD6NK50Z
2/12
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤ 5.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
STP6NK50Z
STD6NK50Z
STF6NK50Z
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC =25°C
5.6
5.6 (*)
A
ID
Drain Current (continuous) at TC = 100°C
3.5
3.5 (*)
A
IDM ( )
Drain Current (pulsed)
22.4
22.4 (*)
A
PTOT
Total Dissipation at TC =25°C
90
25
W
Derating Factor
0.72
0.2
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
3000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55to150
°C
TO-220
DPAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.38
5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5.6
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25 °C, ID =IAR,VDD =50 V)
180
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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