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STF12NK65Z Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STF12NK65Z Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STF12NK65Z 4/12 Doc ID 18060 Rev 1 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID =1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125°C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 33.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID =10 A 0.57 0.7 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 5 A - 9.5 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1837 208 48.8 - pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance VDS =0, VDS = 0 to 520 V - 122 - pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 325 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) - 25 14 55 11.5 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 10 A, VGS = 10 V (see Figure 15) - 62.6 9.6 36 - nC nC nC RG Intrinsic gate resistance f = 1 MHz open drain - 1 - Ω |
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