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STF12NK65Z Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części STF12NK65Z
Szczegółowy opis  N-channel 650 V, 0.57 ohm, 10 A, TO-220FP
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF12NK65Z Arkusz danych(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF12NK65Z
4/12
Doc ID 18060 Rev 1
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID =1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
33.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID =10 A
0.57
0.7
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 5 A
-
9.5
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1837
208
48.8
-
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VDS =0, VDS = 0 to 520 V
-
122
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 325 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
-
25
14
55
11.5
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 10 A,
VGS = 10 V
(see Figure 15)
-
62.6
9.6
36
-
nC
nC
nC
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
1
-
Ω


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