TIP50 datasheet(2/4 Pages) STMICROELECTRONICS

Numer części	TIP50

Szczegółowy opis	SILICON NPN SWITCHING TRANSISTORS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.125

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

for TIP47

VCE = 350 V

for TIP48

VCE = 400 V

for TIP49

VCE = 450 V

for TIP50

VCE = 500 V

1

mA

ICEO

Collector Cut-off

Current (IB = 0)

for TIP47

VCE = 150 V

for TIP48

VCE = 200 V

for TIP49

VCE = 250 V

for TIP50

VCE = 300 V

1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

1

mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

for TIP47

for TIP48

for TIP49

for TIP50

250

300

350

400

V

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

1

V

VBE(on)*

Base-Emitter Voltage

IC = 1 A

VCE = 10 V

1.5

V

hFE*

DC Current Gain

IC = 0.3 A

VCE = 10 V

IC = 1 A

VCE = 10 V

30

10

150

fT

Transition Frequency

VCE = 10 V

IC = 0.2 A

f = 2 MHz

10

MHz

hfe

Small Signal Current

Gain

VCE = 10 V

IC = 0.2 A

f = 1 KHz

25

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

TIP47 / TIP48 / TIP49 / TIP50

2/4

Podobny numer części - TIP50

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