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74HCT125DB Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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74HCT125DB Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 17 page 74HC_HCT125 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 10 January 2013 3 of 17 NXP Semiconductors 74HC125; 74HCT125 Quad buffer/line driver; 3-state 5.2 Pin description 6. Functional description [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 7. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. Table 2. Pin description Symbol Pin Description 1OE, 2OE, 3OE, 4OE 1, 4, 10, 13 output enable input (active LOW) 1A, 2A, 3A, 4A 2, 5, 9, 12 data input 1Y, 2Y, 3Y, 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage Table 3. Function table[1] Control Input Output nOE nA nY LLL HH HX Z Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +7 V IIK input clamping current VI < 0.5 V or VI >VCC +0.5 V [1] - 20 mA IOK output clamping current VO < 0.5 V or VO >VCC +0.5 V [1] - 20 mA IO output current VO = 0.5 V to (VCC +0.5 V) - 35 mA ICC supply current - +70 mA IGND ground current - 70 mA Tstg storage temperature 65 +150 C Ptot total power dissipation [2] DIP14 package - 750 mW SO14 and (T)SSOP14 packages - 500 mW |
Podobny numer części - 74HCT125DB |
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Podobny opis - 74HCT125DB |
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