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IRF8788TRPBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF8788TRPBF
Szczegółowy opis  Synchronous MOSFET for Notebook Processor Power
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF8788TRPBF Arkusz danych(HTML) 1 Page - International Rectifier

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www.irf.com
1
8/18/08
IRF8788PbF
HEXFET® Power MOSFET
Notes
 through … are on page 9
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
PD - 97137A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
20
RθJA
Junction-to-Ambient
fg
–––
50
°C/W
V
A
W
°C
Max.
24
19
190
±20
30
-55 to + 150
2.5
0.02
1.6
VDSS
RDS(on) max
Qg
30V 2.8m:@VGS = 10V 44nC


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