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TIP147 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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TIP147 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP145 / TIP146 / TIP147 Rev. B1 1 October 2009 TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142 Absolute Maximum Ratings* T A = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP145 : TIP146 : TIP147 - 60 - 80 - 100 V V V VCEO Collector-Emitter Voltage : TIP145 : TIP146 : TIP147 - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25°C) 125 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to +150 °C TO-3P 1 1.Base 2.Collector 3.Emitter Equivalent Circuit B E C R1 R2 R1 8k Ω ≅ R2 0.12k Ω ≅ |
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