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SI2323CDS-T1-GE3 Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI2323CDS-T1-GE3 Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Vishay Siliconix Si2323CDS Document Number: 65700 S13-2081-Rev. B, 30-Sep-13 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 0 255075 100 125 150 TC - Case Temperature (°C) Package Limited Power, Junction-to-Foot 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) |
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Podobny opis - SI2323CDS-T1-GE3 |
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