SI7129DN-T1-GE3 datasheet(1/13 Pages) VISHAY

Numer części	SI7129DN-T1-GE3

Szczegółowy opis	P-Channel 30 V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7129DN

Document Number: 68966

S10-2023-Rev. B, 06-Sep-10

www.vishay.com

1

New Product

P-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK®

Package with Small Size and Low 1.07 mm

Profile

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

Adaptor Switch

•

Notebook PC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

e,f

Qg (Typ.)

- 30

0.0114 at VGS = - 10 V

- 35

24.6 nC

0.0200 at VGS = - 4.5V

- 35

S

G

D

P-Channel MOSFET

Ordering Information: Si7129DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

f. Based on TC = 25 °C

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 35e

A

TC = 70 °C

- 35e

TA = 25 °C

- 14.4a, b

TA = 70 °C

- 11.5a, b

Pulsed Drain Current

IDM

- 60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 35e

TA = 25 °C

- 3.2a, b

Avalanche Current

L = 0.1 mH

IAS

- 25

Single-Pulse Avalanche Energy

EAS

31.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

52.1

W

TC = 70 °C

3.3

TA = 25 °C

3.8a, b

TA = 70 °C

2.4a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

Podobny numer części - SI7129DN-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI7129DN-T1-GE3	609Kb / 13P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022

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Podobny opis - SI7129DN-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
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	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
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SI7129DN-T1-GE3 Arkusz danych(PDF) 1 Page - Vishay Siliconix

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