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TSC10 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC10 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page Preliminary TSC10 High Voltage NPN Transistor 1/4 Version: Preliminary TO-92 PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC10CT B0 TO-92 1Kpcs / Bulk TSC10CT B0G TO-92 1Kpcs / Bulk TSC10CT A3 TO-92 2Kpcs / Ammo TSC10CT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Halogen Free Product Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 980 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 10 V DC 1.5 Collector Current Pulse IC 3 A Total Power Dissipation @ TC=25ºC PDTOT 1.96 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance Junction to Ambient RӨJA 215 oC/W Thermal Resistance Junction to Case RӨJC 65 oC/W Pin Definition: 1. Emitter 2. Collector 3. Base |
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