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2SD1415A Arkusz danych(PDF) 4 Page - Toshiba Semiconductor |
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2SD1415A Arkusz danych(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SD1415A 2009-12-21 4 Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area 0 0 25°C −50°C Tc = 100°C Common emitter VCE = 3 V 2 4 6 8 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 10 0.01 1 0.03 0.1 0.3 1 3 10 30 3 30 100 300 1 ms* DC operation Tc = 25°C IC max (pulse) IC max (continuous) 100 μs* 10 ms* 100 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max |
Podobny numer części - 2SD1415A |
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Podobny opis - 2SD1415A |
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