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L6004R6 Arkusz danych(PDF) 2 Page - Littelfuse

Numer części L6004R6
Szczegółowy opis  4 Amp Sensitive & Standard Triacs
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Producent  LITTELFUSE [Littelfuse]
Strona internetowa  http://www.littelfuse.com
Logo LITTELFUSE - Littelfuse

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52
Revised: June 24, 2011 04:57 PM
©2011 Littelfuse, Inc
Teccor® brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
4 Amp Sensitive & Standard Triacs
Lxx04xx & Qxx04xx Series
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Sensitive Triac (4 Quadrants)
Symbol
Test Conditions
Quadrant
Lxx04x3
Lxx04x5
Lxx04x6
Lxx04x8
Unit
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
3
5
5
10
mA
IV
3
5
10
20
V
GT
ALL
MAX.
1.3
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 110°C
ALL
MIN.
0.2
V
I
H
I
T = 100mA
MAX.
5
10
10
15
mA
dv/dt
V
D = VDRM Gate Open TJ = 100°C
400V
TYP.
25
25
30
35
V/μs
600V
15
15
20
25
(dv/dt)c
(di/dt)c = 2.16 A/ms T
J = 110°C
TYP.
0.5
1
1
1
V/μs
t
gt
I
G = 2 x IGT PW = 15μs IT = 5.6 A(pk)
TYP.
2.8
3.0
3.0
3.2
μs
Absolute Maximum Ratings — Standard Triacs
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(full sine wave)
Qxx04Ly / Qxx04Dy
T
C = 95°C
4
A
Qxx04Ry / Qxx04Vy
T
C = 85°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
46
A
f = 60 Hz
t = 16.7 ms
55
I2t
I2t Value for fusing
t
p = 8.3 ms
12.5
A2s
di/dt
Critical rate of rise of on-state current
(I
G = 50mA with ≤ 0.1μs rise time)
f = 120 Hz
T
J = 125°C
50
A/μs
I
GTM
Peak gate trigger current
t
p ≤ 10 μs;
I
GT ≤ IGTM
T
J = 125°C
1.2
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.3
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Note: xx = voltage, y = sensitivity
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Standard Triac
Symbol
Test Conditions
Quadrant
Qxx04x3
Qxx04x4
Unit
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
10
25
mA
IV
TYP.
25
50
V
GT
I – II – III
MAX.
1.3
1.3
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 125°C
ALL
MIN.
0.2
0.2
V
I
H
I
T = 200mA
MAX.
20
30
mA
dv/dt
V
D = VDRM Gate Open TJ = 125°C
400V
MIN.
40
75
V/μs
600V
30
50
800V
40
V
D = VDRM Gate Open TJ = 100°C
1000V
50
(dv/dt)c
(di/dt)c = 2.16 A/ms T
J = 125°C
TYP.
2
2
V/μs
t
gt
I
G = 2 x IGT PW = 15μs IT = 5.6 A(pk)
TYP.
2.5
3.0
μs
Note: xx = voltage, x = package


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