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TIP29 Arkusz danych(PDF) 2 Page - Boca Semiconductor Corporation |
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TIP29 Arkusz danych(HTML) 2 Page - Boca Semiconductor Corporation |
2 / 2 page Continental Device India Limited Data Sheet Page 2 of 3 Emitter-base voltage (open collector) VEBO max. 5.0 V Collector current IC max. 1.0 A Collector current (Peak) ICM max. 3.0 A Base current IB max. 0.4 A Total power dissipation upto TC=25°C Ptot max. 30 W Derate above 25°C max. 0.24 W/°C Total power dissipation upto TA=25°C Ptot max. 2 W Derate above 25°C max. 0.016 W/°C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 ºC THERMAL RESISTANCE From junction to ambient Rth j–a 62.5 °C/W From junction to case Rth j–c 4.167 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 29 29A 29B 29C 30 30A 30B 30C Collector cutoff current IB = 0; VCE = 30V ICEO max. 0.3 0.3 – – mA IB = 0; VCE = 60V ICEO max. – – 0.3 0.3 mA VEB = 0; VCE = VCEO ICES max. 0.2 mA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 1.0 mA Breakdown voltages IC = 30 mA; IB = 0 VCEO(sus)* min. 40 60 80 100 V IC = 1 mA; IE = 0 VCBO min. 40 60 80 100 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 1 A; IB = 125 mA VCEsat* max. 0.7 V Base emitter on voltage IC = 1 A; VCE = 4 V VBE(on)* max. 1.3 V D.C. current gain IC = 0.2 A; VCE = 4 V hFE* min. 40 IC = 1 A; VCE = 4 V hFE* min. 15 max. 75 Small-signal current gain IC = 0.2A; VCE = 10V; f = 1 KHz hfe min. 20 Transition frequency IC = 0.2A; VCE = 10V; f = 1 MHz fT (2) min. 3 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (2) fT = |hfe|• ftest. TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C http://www.bocasemi.com page: 2 |
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