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TIP29 Arkusz danych(PDF) 2 Page - Boca Semiconductor Corporation

Numer części TIP29
Szczegółowy opis  General purpose Amplifier and Switching Applications
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Producent  BOCA [Boca Semiconductor Corporation]
Strona internetowa  http://www.bocasemi.com
Logo BOCA - Boca Semiconductor Corporation

TIP29 Arkusz danych(HTML) 2 Page - Boca Semiconductor Corporation

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Continental Device India Limited
Data Sheet
Page 2 of 3
Emitter-base voltage (open collector)
VEBO
max.
5.0
V
Collector current
IC
max.
1.0
A
Collector current (Peak)
ICM
max.
3.0
A
Base current
IB
max.
0.4
A
Total power dissipation upto TC=25°C
Ptot
max.
30
W
Derate above 25°C
max.
0.24
W/°C
Total power dissipation upto TA=25°C
Ptot
max.
2
W
Derate above 25°C
max.
0.016
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
–65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient
Rth j–a
62.5
°C/W
From junction to case
Rth j–c
4.167
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
29
29A 29B 29C
30
30A 30B 30C
Collector cutoff current
IB = 0; VCE = 30V
ICEO
max. 0.3 0.3
mA
IB = 0; VCE = 60V
ICEO
max. –
0.3
0.3
mA
VEB = 0; VCE = VCEO
ICES
max.
0.2
mA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
1.0
mA
Breakdown voltages
IC = 30 mA; IB = 0
VCEO(sus)* min. 40 60
80
100
V
IC = 1 mA; IE = 0
VCBO
min. 40
60
80
100
V
IE = 1 mA; IC = 0
VEBO
min.
5.0
V
Saturation voltages
IC = 1 A; IB = 125 mA
VCEsat*
max.
0.7
V
Base emitter on voltage
IC = 1 A; VCE = 4 V
VBE(on)* max.
1.3
V
D.C. current gain
IC = 0.2 A; VCE = 4 V
hFE*
min.
40
IC = 1 A; VCE = 4 V
hFE*
min.
15
max.
75
Small-signal current gain
IC = 0.2A; VCE = 10V; f = 1 KHz
hfe
min.
20
Transition frequency
IC = 0.2A; VCE = 10V; f = 1 MHz
fT (2)
min.
3
MHz
* Pulse test: pulse width
≤ 300 µs; duty cycle ≤ 2%.
(2) fT = |hfe|• ftest.
TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
http://www.bocasemi.com
page: 2


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