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CSD13202Q2 Arkusz danych(PDF) 3 Page - Texas Instruments |
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CSD13202Q2 Arkusz danych(HTML) 3 Page - Texas Instruments |
3 / 11 page 0 5 10 15 20 25 30 35 40 45 50 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS - Drain-to-Source Voltage (V) VGS = 4.5V VGS = 3V VGS =2.5V G001 0 5 10 15 20 25 30 35 40 45 50 0 0.4 0.8 1.2 1.6 2 2.4 VGS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 GATE Source DRAIN M0164-01 GATE Source DRAIN M0164-02 CSD13202Q2 www.ti.com SLPS313 – SEPTEMBER 2013 Max RθJA = 60 when Max RθJA = 210 when mounted on 1 inch2 mounted on minimum (6.45 cm2) of 2-oz. pad area of 2-oz. (0.071-mm thick) Cu. (0.071-mm thick) Cu. TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD13202Q2 |
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