CSD19535KCS

SLPS484 – JANUARY 2014

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain-to-Source Voltage

100

V

Drain-to-Source Leakage Current

1

μA

Gate-to-Source Leakage Current

100

nA

Gate-to-Source Threshold Voltage

2.2

2.7

3.4

V

3.4

4.4

m

Ω

Drain-to-Source On Resistance

3.1

3.6

m

Ω

Transconductance

274

S

Dynamic Characteristics

Input Capacitance

6100

7930

pF

Output Capacitance

1160

1500

pF

Reverse Transfer Capacitance

29

38

pF

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (10 V)

78

101

nC

Gate Charge Gate to Drain

13

nC

Gate Charge Gate to Source

25

nC

16

nC

Output Charge

196

nC

Turn On Delay Time

32

ns

Rise Time

15

ns

Turn Off Delay Time

60

ns

Fall Time

5

ns

Diode Characteristics

Diode Forward Voltage

0.9

1.1

V

Reverse Recovery Charge

421

nC

di/dt = 300 A/

μs

Reverse Recovery Time

89

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Thermal Resistance Junction to Case

0.5

°C/W

Thermal Resistance Junction to Ambient

62

°C/W

2

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