STB1277L datasheet(1/4 Pages) KODENSHI

Numer części	STB1277L

Szczegółowy opis	PNP Silicon Transistor

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Producent	KODENSHI [KODENSHI_AUK CORP.]

Strona internetowa	http://www.kodenshi.co.kr

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KSD-T0D007-000

1

STB1277L

PNP Silicon Transistor

1: Emitter

2 :Collector

3: Base

PIN Connection

Description

• Audio power amplifier

• High current application

Features

• High current : IC=-2A

• Complementary pair with STD1862L

Ordering Information

Type NO.

Marking

Package Code

STB1277L

STB1277

TO-92L

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

-30

V

Collector-Emitter voltage

VCEO

-30

V

Emitter-Base voltage

VEBO

-5

V

Collector current

IC

-2

A

Collector dissipation

PC

1

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=-100μA, IE=0

-30

-

V

Collector-Emitter breakdown voltage

BVCEO

IC=-1mA, IB=0

-30

-

V

Emitter-Base breakdown voltage

BVEBO

IE=-1mA, IC=0

-5

-

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-

-100

nA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-

-100

nA

DC current gain

hFE*

VCE=-2V, IC=-500mA

100

-

320

-

Base-Emitter on voltage

VBE(on)

VCE=-2V, IC=-500mA

-

-1

V

Collector-Emitter saturation voltage

VCE(sat)

IC=-2A, IB=-0.2A

-

-0.8

V

Transition frequency

fT

VCB=-5V, IC=-50mA

-

170

-

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

48

-

pF

*

: hFE rank / O : 100~200, Y : 160~320

TO -92L

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KODENSHI_AUK CORP.	STB1277L	196Kb / 4P	PNP Silicon Transistor

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