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2N5116 Arkusz danych(PDF) 1 Page - Calogic, LLC

Numer części 2N5116
Szczegółowy opis  P-Channel JFET Switch
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Strona internetowa  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

2N5116 Arkusz danych(HTML) 1 Page - Calogic, LLC

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P-Channel JFET Switch
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and
±10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES
•• Low ON Resistance
•• ID(off)<500pA
•• Switches directly from TTL Logic
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +200oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N5114-16
Hermetic TO-18
-55
oC to +200oC
X2N5114-16 Sorted Chips in Carriers
-55
oC to +200oC
CORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
SWITCHING CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
2N5114
2N5115
2N5116
UNITS
MAX
MAX
MAX
td
Turn-ON Delay Time
6
10
12
ns
tr
Rise Time (Note 2)
10
20
30
toff
Turn-OFF Delay Time (Note 2)
6
8
10
tf
Fall Time (Note 2)
15
30
50
ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETER
2N5114
2N5115
2N5116
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
BVGSS
Gate-Source Breakdown Voltage
30
30
30
V
IG = 1
µA, VDS = 0
IGSS
Gate Reverse Current
500
500
500
pA
VGS = 20V, VDS = 0
1.0
1.0
1.0
µATA 150oC
ID(off)
Drain Cutoff Current
-500
-500
-500
pA
VDS = -15V
VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
-1.0
-1.0
-1.0
µA
VP
Gate-Source Pinch-Off Voltage
5
10
3
6
1
4
V
VDS = -15V, ID = -1nA
5508


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