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2N5116 Arkusz danych(PDF) 1 Page - Calogic, LLC |
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2N5116 Arkusz danych(HTML) 1 Page - Calogic, LLC |
1 / 2 page P-Channel JFET Switch 2N5114 – 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES •• Low ON Resistance •• ID(off)<500pA •• Switches directly from TTL Logic ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature Range . . . . . . . . . . . -55 oC to +200oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25 oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 2N5114-16 Hermetic TO-18 -55 oC to +200oC X2N5114-16 Sorted Chips in Carriers -55 oC to +200oC CORPORATION PIN CONFIGURATION S TO-18 G,C D SWITCHING CHARACTERISTICS (TA = 25 oC unless otherwise specified) SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS MAX MAX MAX td Turn-ON Delay Time 6 10 12 ns tr Rise Time (Note 2) 10 20 30 toff Turn-OFF Delay Time (Note 2) 6 8 10 tf Fall Time (Note 2) 15 30 50 ELECTRICAL CHARACTERISTICS (TA = 25 oC unless otherwise specified) SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS TEST CONDITIONS MIN MAX MIN MAX MIN MAX BVGSS Gate-Source Breakdown Voltage 30 30 30 V IG = 1 µA, VDS = 0 IGSS Gate Reverse Current 500 500 500 pA VGS = 20V, VDS = 0 1.0 1.0 1.0 µATA 150oC ID(off) Drain Cutoff Current -500 -500 -500 pA VDS = -15V VGS = 12V (2N5114) VGS = 7V (2N5115) VGS = 5V (2N5116) -1.0 -1.0 -1.0 µA VP Gate-Source Pinch-Off Voltage 5 10 3 6 1 4 V VDS = -15V, ID = -1nA 5508 |
Podobny numer części - 2N5116 |
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Podobny opis - 2N5116 |
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