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FQD19N10LTM Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FQD19N10LTM Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 FQD19N10L N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ Description ©2000 Fairchild Semiconductor Corporation FQD19N10L Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQD19N10LTM Unit RJC Thermal Resistance, Junction to Case, Max. 2.5 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 D-PAK G S D G S D • 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested Symbol Parameter FQD19N10LTM Unit VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 15.6 A - Continuous (TC = 100°C) 9.8 A IDM Drain Current - Pulsed (Note 1) 62.4 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ IAR Avalanche Current (Note 1) 15.6 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 50 W - Derate Above 25°C 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 300 °C |
Podobny numer części - FQD19N10LTM |
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Podobny opis - FQD19N10LTM |
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