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IRF6674TRPBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF6674TRPBF
Szczegółowy opis  DirectFETPower MOSFET
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF6674TRPBF Arkusz danych(HTML) 1 Page - International Rectifier

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1
4/24/08
DirectFET
™ Power MOSFET ‚
PD - 97133
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A.
Notes:
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6674TRPbF
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

SH
SJ
SP
MZ
MN
Description
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
DirectFET
™ ISOMETRIC
MZ
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0
10
20
30
40
50
TJ = 25°C
TJ = 125°C
ID = 13.4A
VDSS
VGS
RDS(on)
60V max ±20V max 9.0m
Ω@ 10V
Qg tot
Qgd
Vgs(th)
24nC
8.3nC
4.0V
010
20
30
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VDS= 48V
VDS= 30V
ID= 13.4A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAS
Avalanche Current
Ãh
A
98
Max.
10.7
67
134
±20
60
13.4
13.4


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