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IRF6728MTRPBF Arkusz danych(PDF) 3 Page - International Rectifier

Numer części IRF6728MTRPBF
Szczegółowy opis  HEXFET Power MOSFET plus Schottky Diode
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF6728MTRPBF Arkusz danych(HTML) 3 Page - International Rectifier

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IRF6728MTRPbF
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3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Absolute Maximum Ratings
Parameter
Units
PD @TA = 25°C
Power Dissipation
e
W
PD @TA = 70°C
Power Dissipation
e
PD @TC = 25°C
Power Dissipation
f
TP
Peak Soldering Temperature
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
el
–––
60
RθJA
Junction-to-Ambient
jl
12.5
–––
RθJA
Junction-to-Ambient
kl
20
–––
°C/W
RθJC
Junction-to-Case
fl
–––
1.66
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
W/°C
0.017
270
-40 to + 150
Max.
75
2.1
1.3
Ri (°C/W)
τι (sec)
24.84696 2.379018
10.92897 0.219018
3.658783 0.00733
20.42272 15.9657
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
Ci
i
/Ri
Ci=
τi/Ri
τ
τC
τ4
τ4
R4
R4


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IRF6728MTRPBF IRF-IRF6728MTRPBF Datasheet
253Kb / 9P
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