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IRF7739L2PBF Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF7739L2PBF
Szczegółowy opis  DirectFETPower MOSFET 
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

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IRF7739L2PbF
www.irf.com © 2014 International Rectifier
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February 13, 2014
2
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.008
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.70
1.0
m
VGS(th)
Gate Threshold Voltage
2.0
2.8
4.0
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.7
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
280
–––
–––
S
Qg
Total Gate Charge
–––
220
330
Qgs1
Pre-Vth Gate-to-Source Charge
–––
46
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
19
–––
nC
Qgd
Gate-to-Drain Charge
–––
81
120
Qgodr
Gate Charge Overdrive
–––
74
–––
See Fig. 9
Qsw
Switch Charge (Qgs2 + Qgd)
–––
100
–––
Qoss
Output Charge
–––
83
–––
nC
RG
Gate Resistance
–––
1.5
–––
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
71
–––
td(off)
Turn-Off Delay Time
–––
56
–––
ns
tf
Fall Time
–––
42
–––
Ciss
Input Capacitance
––– 11880
–––
Coss
Output Capacitance
–––
2510
–––
pF
Crss
Reverse Transfer Capacitance
–––
1240
–––
Coss
Output Capacitance
–––
8610
–––
Coss
Output Capacitance
–––
2230
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
110
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
1070
(Body Diode)
Ãg
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
87
130
ns
Qrr
Reverse Recovery Charge
–––
250
380
nC
MOSFET symbol
RG=1.8Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10VÃi
VGS = 0V
ƒ = 1.0MHz
ID = 160A
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 160A i
TJ = 25°C, IF = 160A, VDD = 20V
di/dt = 100A/µs
i
TJ = 25°C, IS = 160A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
ID = 160A
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 10V, ID = 160A
VDS = 20V


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