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FCD380N60ECT-ND Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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1 / 9 page December 2013 ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C2 www.fairchildsemi.com 1 FCD380N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Ω Features •650 V @ TJ = 150°C •Typ. RDS(on) = 320 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 97 pF) • 100% Avalanche Tested • An Integrated Gate Resistor •RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementa- tion. For faster switching in applications where switching losses must be at an absolute minimum, please consider the Super- FET II MOSFET series. D-PAK G S D G S D Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCD380N60E Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1 Hz) ±30 V ID Drain Current - Continuous (TC = 25oC) 10.2 A - Continuous (TC = 100oC) 6.4 IDM Drain Current - Pulsed (Note 1) 30.6 A EAS Single Pulsed Avalanche Energy (Note 2) 211.6 mJ IAR Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 1.06 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 106 W - Derate Above 25oC0.85 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCD380N60E Unit RθJC Thermal Resistance, Junction to Case, Max. 1.18 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 100 |
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