FCD900N60Z datasheet(2/9 Pages) FAIRCHILD

Numer części	FCD900N60Z

Szczegółowy opis	FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m廓

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FCD900N60Z Rev. C3

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2

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FCD900N60Z

DPAK

Tape and Reel

330 mm

16 mm

2500 units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

VGS = 0 V, ID = 10 mA, TJ = 25°C

600

-

V

VGS = 0 V, ID = 10 mA, TJ = 150°C

650

-

ΔBVDSS

/

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, Referenced to 25oC

-

0.72

-

V/oC

BVDS

Drain to Source Avalanche Breakdown

Voltage

VGS = 0 V, ID = 4.5 A

-

700

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 480 V, VGS = 0 V

-

5

μA

VDS = 480 V, TC = 125oC-

-

20

IGSSF

Gate-Body Leakage Current, Forward

VGS = 20 V, VDS = 0 V

-

10

uA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -20 V, VDS = 0 V

-

-10

uA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250 μA2.5

-

3.5

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 2.3 A

-

0.82

0.90

Ω

gFS

Forward Transconductance

VDS = 20 V, ID = 2.3 A

-4.6

-

S

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1 MHz

-

543

720

pF

Coss

Output Capacitance

-

400

530

pF

Crss

Reverse Transfer Capacitance

-

20

30

pF

Coss

Output Capacitance

VDS = 380 V, VGS = 0 V, f = 1 MHz

-

11

-

pF

Coss(eff.)

Effective Output Capacitance

VDS = 0 V to 480 V, VGS = 0 V

-

49

-

pF

Qg(tot)

Total Gate Charge at 10V

VDS = 380 V, ID = 2.3 A,

VGS = 10 V

(Note 4)

-13

17

nC

Qgs

Gate to Source Gate Charge

-

2.3

-

nC

Qgd

Gate to Drain “Miller” Charge

-

4.8

-

nC

ESR

Equivalent Series Resistance

f = 1 MHz

-

2.4

-

Ω

td(on)

Turn-On Delay Time

VDD = 380 V, ID = 2.3 A,

VGS = 10 V, RG = 4.7 Ω

(Note 4)

-10.9

32

ns

tr

Turn-On Rise Time

-

5.3

21

ns

td(off)

Turn-Off Delay Time

-

33.6

77

ns

tf

Turn-Off Fall Time

-

11.9

34

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

4.5

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

13.5

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 2.3 A

-

1.2

V

trr

Reverse Recovery Time

VGS = 0 V, ISD = 2.3 A,

dIF/dt = 100 A/μs

-

156

-

ns

Qrr

Reverse Recovery Charge

-

1.3

-

μC

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. IAS = 1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 2.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

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