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FCD900N60Z Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FCD900N60Z Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2012 Fairchild Semiconductor Corporation FCD900N60Z Rev. C3 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCD900N60Z FCD900N60Z DPAK Tape and Reel 330 mm 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC - 0.72 - V/oC BVDS Drain to Source Avalanche Breakdown Voltage VGS = 0 V, ID = 4.5 A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 5 μA VDS = 480 V, TC = 125oC- - 20 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V - - 10 uA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V - - -10 uA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.3 A - 0.82 0.90 Ω gFS Forward Transconductance VDS = 20 V, ID = 2.3 A -4.6 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 543 720 pF Coss Output Capacitance - 400 530 pF Crss Reverse Transfer Capacitance - 20 30 pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 11 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 49 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 2.3 A, VGS = 10 V (Note 4) -13 17 nC Qgs Gate to Source Gate Charge - 2.3 - nC Qgd Gate to Drain “Miller” Charge - 4.8 - nC ESR Equivalent Series Resistance f = 1 MHz - 2.4 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 2.3 A, VGS = 10 V, RG = 4.7 Ω (Note 4) -10.9 32 ns tr Turn-On Rise Time - 5.3 21 ns td(off) Turn-Off Delay Time - 33.6 77 ns tf Turn-Off Fall Time - 11.9 34 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.5 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 2.3 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 2.3 A, dIF/dt = 100 A/μs - 156 - ns Qrr Reverse Recovery Charge - 1.3 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 2.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
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