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IRLML2030TRPBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRLML2030TRPBF Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 10 page IRLML2030TRPbF 2 www.irf.com Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C ––– 123 154 –––80100 VGS(th) Gate Threshold Voltage 1.3 1.7 2.3 V IDSS ––– ––– 1 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 7.6 ––– Ω gfs Forward Transconductance 2.6 ––– ––– S Qg Total Gate Charge ––– 1.0 ––– Qgs Gate-to-Source Charge ––– 0.34 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 0.34 ––– td(on) Turn-On Delay Time ––– 4.1 ––– tr Rise Time ––– 3.3 ––– td(off) Turn-Off Delay Time ––– 4.5 ––– tf Fall Time ––– 2.9 ––– Ciss Input Capacitance ––– 110 ––– Coss Output Capacitance ––– 29 ––– Crss Reverse Transfer Capacitance ––– 12 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 9.0 14 ns Qrr Reverse Recovery Charge ––– 0.3 0.4 nC di/dt = 100A/μs d VGS = 20V VGS = -20V TJ = 25°C, IS = 2.7A, VGS = 0V d integral reverse p-n junction diode. VDS = 10V, ID = 2.7A ID = 2.7A ID = 1.0A TJ = 25°C, VR = 15V, IF=2.7A MOSFET symbol showing the VDS =15V Conditions VGS = 4.5V VGS = 0V VDS = 15V ƒ = 1.0MHz RG = 6.8Ω VGS = 4.5V d Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 2.2A d VDS = VGS, ID = 25μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C RDS(on) VGS = 10V, ID = 2.7A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Ω VDD =15Vd nA nC ns pF A 1.6 11 ––– ––– ––– ––– |
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