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Zakładka z wyszukiwarką danych komponentów |
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1N5195UR Arkusz danych(PDF) 1 Page - Compensated Deuices Incorporated |
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1N5195UR Arkusz danych(HTML) 1 Page - Compensated Deuices Incorporated |
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1 / 2 page  FIGURE 1 DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. MILLIMETERS INCHES DIM MIN MAX MIN MAX D 1.60 1.70 0.063 0.067 F 0.41 0.55 0.016 0.022 G 3.30 3.70 .130 .146 G1 2.54 REF. .100 REF. S 0.03 MIN. .001 MIN. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com • AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 650mA VRM VRWM I O I O I FSM TYPE TA = +150°C TP=1/120 S TA=25ºC V(pk) V(pk) mA mA A CDLL, 1N5194UR 80 70 200 50 2 CDLL, 1N5195UR 180 180 200 50 2 CDLL, 1N5196UR 250 225 200 50 2 VF IR1 at VRWM IR2 at VRM IR3 at VRWM TYPE @100mA TA=25ºC TA = 150°C V dc nA dc µA µAdc CDLL, 1N5194UR 0.8 - 1.0 25 100 5 CDLL, 1N5195UR 0.8 - 1.0 25 100 5 CDLL, 1N5196UR 0.8 - 1.0 25 100 5 |
Podobny numer części - 1N5195UR |
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Podobny opis - 1N5195UR |
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