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STF31N65M5 Arkusz danych(PDF) 6 Page - STMicroelectronics |
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STF31N65M5 Arkusz danych(HTML) 6 Page - STMicroelectronics |
6 / 25 page Electrical characteristics STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 6/25 DocID022848 Rev 3 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d (v) t r (v) t f (i) t c(off) Voltage delay time Voltage rise time Current fall time Crossing time V DD = 400 V, I D = 14 A, R G = 4.7 Ω, V GS = 10 V (see Figure 21 and Figure 24) - 46 8 8.5 11 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 22 88 A A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 22 A, V GS = 0 - 1.5 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 22 A, di/dt = 100 A/μs V DD = 100 V (see Figure 21) - 336 5 30 ns μC A t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 22 A, di/dt = 100 A/μs V DD = 100 V, T j = 150 °C (see Figure 21) - 406 6 31 ns μC A |
Podobny numer części - STF31N65M5 |
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Podobny opis - STF31N65M5 |
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