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STB40N20 Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STB40N20
Szczegółowy opis  N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB40N20 Arkusz danych(HTML) 3 Page - STMicroelectronics

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Obsolete
Product(s)
- Obsolete
Product(s)
STB40N20 - STP40N20 - STP40N20FP - STW40N20
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D2PAK
TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate- source voltage
± 20
V
ID
(1)
1.
Value limited by wire bonding
Drain current (continuous) at TC = 25°C
40
A
ID
(1)
Drain current (continuous) at TC = 100°C
25
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
160
A
Ptot
Total dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
dv/dt (3)
3.
ISD ≤40A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
TO-220
D2PAK
TO-247
TO-220FP
Rthj-case Thermal resistance junction-case max
0.78
3.1
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
62.5
°C/W
TJ
Maximum lead temperature for soldering
purpose(1)
1.
for 10 sec. 1.6mm from case
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-
Repetitive
(pulse width limited by Tj max)
40
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
230
mJ


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