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IRF2804S-7P Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF2804S-7P
Szczegółowy opis  Advanced Process Technology
Download  11 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF2804S-7P Arkusz danych(HTML) 1 Page - International Rectifier

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IRF2804S-7P
HEXFET® Power MOSFET
VDSS = 40V
RDS(on) = 1.6mΩ
ID = 160A
6/01/05
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET® is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
S
D
G
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.50
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
j
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
40
Max.
320
230
1360
160
10 lbf•in (1.1N•m)
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
G
S
S
S
S
S
D
D
PD - 96891A


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