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KSD2012GTU Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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KSD2012GTU Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Figure 5. Safe Operating Area Figure 6. Power Derating 0123 4567 8 0 1 2 3 4 IB = 50mA IB = 60mA IB = 40mA IB = 70mA IB = 30mA IB = 90 mA IB = 20mA IB = 80 mA IB = 10mA IB = 0mA VCE[V], COLLECTOR-EMITTER VOLTAGE 0.01 0.1 1 10 1 10 100 1000 VCE = 5V IC[A], COLLECTOR CURRENT 0.001 0.1 1 10 0.01 0.1 1 10 Ic = 10 IB IC[A], COLLECTOR CURRENT 0.4 0.8 1.2 1.6 0 1 2 3 4 VCE = 5V VBE[V], BASE-EMITTER VOLTAGE 1 10 100 0.1 1 10 DC ICmax(pulse) IC(max) VCE[V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 TC[ o C], CASE TEMPERATURE |
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