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1N4151 Arkusz danych(PDF) 1 Page - Shanghai Lunsure Electronic Tech |
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1 / 3 page CE 1N4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4151 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units Reverse voltage VR 50 Volts Peak reverse voltage VRM 75 Volts Average rectified current, Half wave rectification with IAV 1501) mA Resistive load at TA=25 and F 50Hz Surge forward current at t<1S and TJ=25 IFSM 500 Ma Power dissipation at TA=25 Ptot 5001) Mw Junction temperature TJ 175 Storage temperature range TSTG -65 to + 175 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Min. Typ. Max. Units Forward voltage VF 1 Volts Leakage current at VR=50V IR 50 nA at VR=20V, TJ=150 IR 50 A Junction capacitance at VR=VF=0V CJ 75 2 pF Reverse breakdown voltage tested with 5 A pulse V(BR)R Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, trr 4 ns from IF=10mA to IR=1mA to IR=1mA, VR=6V.RL=100 trr 4.000 ns Thermal resistance junction to ambient R JA 3501) K/W Rectification efficience at f=100MHz,VRF=2V 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 |
Podobny numer części - 1N4151 |
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Podobny opis - 1N4151 |
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