Producent | Numer części | Arkusz danych | Szczegółowy opis |
Motorola, Inc |
MFE212
|
496Kb / 5P |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Digitron Semiconductors |
MFE211
|
1Mb / 5P |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
New Jersey Semi-Conduct... |
MFE211
|
98Kb / 2P |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Toshiba Semiconductor |
RFM03U3P
|
274Kb / 6P |
Field Effect Transistors Silicon N-Channel MOS
|
RFM06U3X
|
297Kb / 6P |
Field Effect Transistors Silicon N-Channel MOS
|
Renesas Technology Corp |
2SK1493
|
589Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
2SK1495
|
592Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
NTE Electronics |
NTE455
|
79Kb / 2P |
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
|
List of Unclassifed Man... |
RFK35N08
|
220Kb / 4P |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
RFH35N08
|
217Kb / 4P |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|