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BTB1238AL3 Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1238AL3 Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C849L3 Issued Date : 2012.08.28 Revised Date : Page No. : 1/7 BTB1238AL3 CYStek Product Specification Silicon PNP Epitaxial Planar Transistor BVCEO -240V BTB1238AL3 IC -1A VCESAT(Max) -0.3V Description • High BVCEO • High current capability • RoHS compliant package • Pb-free lead plating and halogen-free package Symbol Outline Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -240 V Collector-Emitter Voltage VCEO -240 V Emitter-Base Voltage VEBO -7 V Collector Current (DC) IC -1 A Collector Current (Pulse) ICP -2 A Base Current IB -200 mA Power Dissipation PD 3 (Note ) W Thermal Resistance, Junction to Ambient RθJA 41.7 °C/W Operating Junction and Storage Temperature Range Tj ; Tstg -55 ~ +150 °C Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. BTB1238AL3 SOT-223 B C E C B:Base C:Collector E:Emitter |
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