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2SD2059 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
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2SD2059 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2059 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A 2.0 V VBE Base-emitter on voltage IC=1A;VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 240 hFE-2 DC current gain IC=4A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 12 MHz COB Collector output capacitance f=1MHz;VCB=10V 100 pF hFE-1 Classifications R O Y 40-80 70-140 120-240 |
Podobny numer części - 2SD2059 |
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Podobny opis - 2SD2059 |
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