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2SK2611 Arkusz danych(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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2SK2611 Arkusz danych(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 6 page SEMICONDUCTOR Nell High Power Products RoHS RoHS www.nellsemi.com Page 4 of 6 30 10 1 3 10 5 0.1 0.3 1 3 30 5 4 3 2 1 0 -80 -40 0 40 80 120 160 100 10 1 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 10000 1000 100 300 0.1 1 10 100 5 4 3 2 1 0 2SK2611 Series Common source V =50V DS Pulse test T = -55°C C 25°C 100°C 1 3 5 0.3 0.5 5 30 V =10V GS V =15V GS Common source T =25°C C Pulse test 0.5 5 10 0.3 0.5 1 3 Common source V =10V DS Pulse test I =8A D 4A 2A Common source T =25°C C Pulse test 10V V =0, -1V GS 3V 1V Ciss Coss Crss Common source V =0V GS Pulse test f=1 MHZ T =25°C C 3 5 30 50 30 50 500 3000 5000 Common source V =10V DS l =1 mA D Pulse test -80 -40 0 40 80 120 180 Fig.5 Forward transconductance characteristics Fig.6 On-Resistance variation vs. Drain current and gate voltage Drain current, l (A) D Drain current, l (A) D Fig.7 On-Resistance variation vs. case temperature Fig.8 Drain reverse current vs. Drain-Source voltage Case temperature, T (°C) C Drain-source voltage, V (V) DS Fig.9 Capacitance characteristics Fig.10 Gate threshold voltage vs. case temperature Drain-source voltage, V (V) DS Case temperature, T (°C) C |
Podobny numer części - 2SK2611 |
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Podobny opis - 2SK2611 |
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