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Zakładka z wyszukiwarką danych komponentów |
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IRF640 Arkusz danych(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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IRF640 Arkusz danych(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 7 page  SEMICONDUCTOR RoHS RoHS N-Channel Power MOSFET Nell High Power Products IRF640 Series (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. DESCRIPTION Low reverse transfer capacitance (C = 91pF typical) RSS R = 0.180Ω @ V = 10V DS(ON) GS Ultra low gate charge(63nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 18 V (V) DSS 200 0.180 @ V = 10V GS 63 R (Ω) DS(ON) Q (nC) max. G D (Drain) G (Gate) S (Source) TO-220AB (IRF640A) D G D S 2 TO-263(D PAK) (IRF640H) UNIT V /ns V W /°C A mJ ºC -55 to 150 VALUE 18 11 200 ±20 72 200 125 5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS V =10V, GS T =25°C C V =10V, GS T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current (Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage(Note 1) SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 10 (1.1) 1.6mm from case IAR Repetitive avalanche current (Note 1) 18 T =25°C C 13 Repetitive avalanche energy(Note 1) EAR 0.98 Derating factor above 25 °C G D S D www.nellsemi.com Page 1 of 7 They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These can be operated transistors directly from integrated circuits. EAS Single pulse avalanche energy (Note 2) I =18A, R =50Ω, V =10V AR GS GS I =18A, L=2.7mH AS 580 mJ Note: 1.Repetitive rating: pulse width limited by junction temperature. 2 .V =50V,L=2.7mH,I =18A,R =50Ω,starting T =25˚C DD AS G J 3 .I ≤ 18A, di/dt ≤ 150A/µs, V ≤ V , T 150°C. SD DD (BR)DSS J ≤ W |
Podobny numer części - IRF640 |
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Podobny opis - IRF640 |
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