UF3N25Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-760.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

±20

V

Continuous Drain Current

Continuous

3

A

Pulsed

12

A

Avalanche Energy

52

mJ

Power Dissipation

SOT-223

0.8

W

TO-251/TO-252

1.14

W

Junction Temperature

+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

10

µA

Reverse

-10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

1.7

Ω

DYNAMIC PARAMETERS

Input Capacitance

190

pF

Output Capacitance

80

pF

Reverse Transfer Capacitance

30

pF

SWITCHING PARAMETERS

Total Gate Charge

3.2

nC

Gate to Source Charge

0.64

nC

Gate to Drain Charge

1.6

nC

Turn-ON Delay Time

Ω,

20

ns

Rise Time

90

ns

Turn-OFF Delay Time

30

ns

Fall-Time

50

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

3

A

Maximum Body-Diode Pulsed Current

12

A

Drain-Source Diode Forward Voltage

1.3

V