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LA6583MC Arkusz danych(PDF) 2 Page - ON Semiconductor |
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LA6583MC Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 5 page LA6583MC No.A2034-2/5 Specifications Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage VCC max 15 V Output current IOUT max 0.8 A Output withstand voltage VOUT max 15 V RD/FG output withstand VRD/FG max 15 V RD/FG output current IRD/FG max 5 mA HB output current IB max 10 mA Allowable dissipation Pd max Mounted on a specified board *1 800 mW Operating temperature Topr *2 -30 to +100 °C Storage temperature Tstg -55 to +150 °C *1: Mounted on a specified board: 114.3mm × 76.1mm × 1.6mm glass epoxy *2: Tj = 150°C Use this IC within a range where the chip temperature does not exceed Tj = 150 C during operation. Caution 1) Absolute maximum ratings represent the value which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Recommended Operating Conditions at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.8 to 14.0 V Common-phase input voltage range of Hall input VICM 0 to VCC-1.5 V Electrical Characteristics at Ta = 25 °C, VCC = 12.0V, unless especially specified. Ratings Parameter Symbol Conditions min typ max Unit ICC1 During drive (CT=L) 4 6 9 mA Circuit Current ICC2 At lock protection (CT=H) 2 4 6 mA Lock detection capacitor charge current ICT1 2.0 2.8 3.5 μA Capacitor discharge current ICT2 0.15 0.23 0.30 μA Capacitor charge/discharge current ratio RCT RCT=ICT1/ICT2 9 12 15 - CT charge voltage VCT1 1.6 1.7 1.8 V CT discharge voltage VCT2 0.6 0.7 0.8 V OUT output L saturation voltage VOL IO=200mA 0.2 0.3 V OUT output H saturation voltage VOH IO=200mA 0.9 1.2 V Hall input sensitivity VHN Zero peak value (Including offset and hysteresis) 7 15 mV RD/FG output pin L voltage VRD/FG IRD/FG=5mA 0.1 0.2 V RD/FG output pin leak current IRD/FGL VRD/FG=15V 1 30 μA HB output voltage VHB IHB=5mA 1.3 1.5 1.7 V Thermal protection circuit TSD Design target value *3 150 180 210 °C *3: This is a design guarantee value and no measurement with an independent unit is made. Thermal protection circuit is built in this IC for the prevention of burnout of IC and thermal destruction. But, since the operation is outside the guarantee temperature range, thermal design must be made so that the thermal protection circuit is not activated during normal fan operation. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
Podobny numer części - LA6583MC |
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Podobny opis - LA6583MC |
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