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IRF740 Arkusz danych(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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IRF740 Arkusz danych(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 7 page SEMICONDUCTOR RoHS RoHS IRF740 Series www.nellsemi.com Page 1 of 7 N-Channel Power MOSFET Nell High Power Products (10A, 400Volts) The Nell IRF740 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. DESCRIPTION Low reverse transfer capacitance (C = 120pF typical) RSS R = 0.55Ω @ V = 10V DS(ON) GS Ultra low gate charge(63nC Max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 10 V (V) DSS 400 0.55 @ V = 10V GS 63 R (Ω) DS(ON) Q (nC) max. G UNIT V /ns V W /°C A mJ ºC -55 to 150 VALUE 10 6.3 400 ±30 40 400 125 4 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS V =10V, GS T =25°C C V =10V, GS T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage(Note 1) SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1.Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 10.0 T =25°C C 2 .V ≤ 50V, L=9.1mH, l =10A, R =25Ω, starting T =25°C DD AS G J 520 Single pulse avalanche energy(Note 2) EAS 3 .I ≤ 10A, di/dt ≤ 120A/µs, V ≤ V , T 150°C. SD DD (BR)DSS J ≤ 1 Derating factor above 25 °C They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors,UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. (IRF740A) TO-220AB D S G D mJ 13 Repetitive avalanche energy(Note 1) EAR l =10A, R =10V AR GS =50Ω, V GS l =10A, =9.1mH AS L D (Drain) G (Gate) S (Source) W |
Podobny numer części - IRF740 |
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Podobny opis - IRF740 |
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