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STB24NM60N Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STB24NM60N Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 15 page STB24NM60N Electrical ratings Doc ID 010008 Rev 1 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 17 A ID Drain current (continuous) at TC = 100 °C 11 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 68 A PTOT Total dissipation at TC = 25 °C 125 W dv/dt(2) 2. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤V(BR)DSS, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 1 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 board, 2 oz Cu Thermal resistance junction-pcb max. 30 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 6A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 300 mJ |
Podobny numer części - STB24NM60N |
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Podobny opis - STB24NM60N |
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