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FQD30N06LTM Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FQD30N06LTM Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.8mH, IAS = 24A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.07 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = 5 V, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A VGS = 5 V, ID = 12 A -- -- 0.031 0.038 0.039 0.047 Ω gFS Forward Transconductance VDS = 25 V, ID = 12 A -- 23 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 800 1040 pF Coss Output Capacitance -- 270 350 pF Crss Reverse Transfer Capacitance -- 50 65 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 16 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 210 430 ns td(off) Turn-Off Delay Time -- 55 120 ns tf Turn-Off Fall Time -- 110 230 ns Qg Total Gate Charge VDS = 48 V, ID = 32 A, VGS = 5 V -- 15 20 nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 8.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 24 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 96 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IF = 32 A, dIF / dt = 100 A/µs -- 55 -- ns Qrr Reverse Recovery Charge -- 80 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A2. January 2009 ©2009 Fairchild Semiconductor Corporation |
Podobny numer części - FQD30N06LTM |
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Podobny opis - FQD30N06LTM |
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