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STF30NM50N Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STF30NM50N Arkusz danych(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB/I/F/P/W30NM50N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 250 V, ID = 13.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 23 20 115 60 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 27 108 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 27 A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 27 A, di/dt = 100 A/µs VDD= 100 V Tj = 25°C (see Figure 20) 480 8 33 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 27 A, di/dt = 100 A/µs VDD= 100 V Tj = 150°C (see Figure 20) 540 10 35 ns µC A Obsolete Product(s) - Obsolete Product(s) |
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